Temperature Dependence of Terrestrial Neutron Induced Failures in Commercial Silicon and Silicon Carbide Power MOSFETs
- Autori: Principato, F.; Cazzaniga, C.; Kastriotou, M.; Frost, C.; Buttacavoli, A.; Abbene, L.; Pintacuda, F.
- Anno di pubblicazione: 2022
- Tipologia: Contributo in atti di convegno pubblicato in volume
- OA Link: http://hdl.handle.net/10447/626933
Abstract
Accelerated neutron tests on Si and SiC power MOSFETs at different temperatures were performed at ChipIr facility (Didcot, UK). The results show a strong correlation between the temperature dependence of the avalanche voltage and that of the neutron failure rate.