Impact of ion implantation channeling on the electrical performance of 4H-SiC Junction Barrier Schottky (JBS) diodes with voltage ratings of 650 V and 1200 V.

This work investigates the impact of ion implantation channeling on the electrical performance of 4H-SiC Junction Barrier Schottky (JBS) diodes. Channeling strongly modifies the p+ doping profile, affecting the pinch-off effect and, consequently, the electric-field distribution at the Schottky interface. Attention is devoted to how implantation conditions influence the effectiveness of pinch-off and the resulting trade-off between forward and reverse characteristics. Electrical Wafer Sorting (EWS) measurements and temperature-dependent characterization are used to assess the impact of different implantation regimes, highlighting a limited effect on low-current forward conduction, while significant variations are observed in reverse leakage and forward voltage under nominal operating conditions. An increase in the channeling implantation energy, and thus in the implantation depth, has been shown to enhance the pinch-off effect, resulting in a reduction of the electric field at the Schottky interface and, consequently, a decrease in leakage current. Temperature analysis further indicates an increased sensitivity of the leakage current as the channeling-induced pinch-off becomes stronger. The experimental findings are supported by electrical simulations, showing good agreement with the observed trends and providing insight into the underlying physical mechanisms. Overall, the results identify ion implantation channeling as a key parameter for controlling the pinch-off behavior and optimizing the trade-off between leakage current, forward voltage, and temperature dependence in 4H-SiC JBS devices.